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PD - 9.1327A IRLI2505 HEXFET(R) Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l l D VDSS = 55V G S RDS(on) = 0.008 ID = 58A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. TO-220 FULLPAK Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Current Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 58 41 360 63 0.42 16 500 54 6.3 5.0 -55 to + 175 300 (1.6mm from case) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient Min. ---- ---- Typ. ---- ---- Max. 2.4 65 Units C/W 8/25/97 IRLI2505 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss C Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.008 VGS = 10V, ID = 31A 0.010 VGS = 5.0V, ID = 31A 0.013 VGS = 4.0V, ID = 26A 2.0 V VDS = VGS , ID = 250A --- S VDS = 25V, I D = 54A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 100 VGS = 16V nA -100 VGS = -16V 130 ID = 54A 25 nC VDS = 44V 67 VGS = 5.0V, See Fig. 6 and 13 --- VDD = 28V --- ID = 54A ns --- RG = 1.3, VGS = 5.0V --- RD = 0.50, See Fig. 10 Between lead, --- 4.5 --- 6mm (0.25in.) nH from package --- 7.5 --- and center of die contact --- 5000 --- VGS = 0V --- 1100 --- pF VDS = 25V --- 390 --- = 1.0MHz, See Fig. 5 --- 12 --- = 1.0MHz Min. 55 --- --- --- --- 1.0 59 --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.035 --- --- --- --- --- --- --- --- --- --- --- --- 12 160 43 84 D G S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions MOSFET symbol --- --- 58 showing the A G integral reverse --- --- 360 p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 31A, VGS = 0V --- 140 210 ns TJ = 25C, IF = 54A --- 650 970 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) D S Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25C, L = 240H RG = 25, IAS = 54A. (See Figure 12) Notes: ISD 54A, di/dt 230A/s, VDD V(BR)DSS, t=60s, =60Hz TJ 175C Pulse width 300s; duty cycle 2%. Use IRL2505 data and test conditions IRLI2505 1000 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTT OM 2.5V TOP 1000 ID , D ra in -to -S o u rc e C u rre n t (A ) 100 ID , D ra in -to -S o u rce C u rre n t (A ) VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP 100 2.5V 10 10 2 .5V 20 s PU LSE W ID TH T J = 2 5C 0.1 1 10 1 A 1 0.1 1 2 0 s PU L SE W ID TH T J = 1 75 C 10 100 A 100 V D S , Drain-to-Source V oltage (V ) V D S , Drain-to-S ource Voltage (V ) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.0 R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce (N o rm a li ze d ) I D = 90 A I D , D r ain- to-S ourc e C urre nt (A ) T J = 2 5 C 100 2.5 T J = 1 7 5 C 2.0 1.5 10 1.0 0.5 1 2.5 3.5 4.5 V DS = 2 5V 2 0 s P U L S E W ID T H 5.5 6.5 7.5 A 0.0 -60 -40 -20 0 20 40 60 80 V G S = 10 V 100 120 140 160 180 A V G S , Ga te-to-S o urce V oltage (V ) T J , Junction T emperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRLI2505 10000 15 V G S , G a te -to -S o u rce V o lta g e (V ) 8000 V GS C is s C rss C oss = 0 V, f = 1M H z = C gs + C gd , Cds SH OR TE D = C gd = C d s + C gd I D = 54A V DS = 44 V V DS = 28 V 12 C , C a p a c ita n c e (p F ) C i ss 6000 9 4000 C o ss 6 2000 3 C rs s A 1 10 100 0 0 0 40 80 FO R TEST CIR CU IT SEE FIG UR E 13 120 160 A 200 V D S , D rain-to-S ource Voltage (V ) Q G , T otal Gate C harge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 I S D , R e v e rse D ra in C u rre n t (A ) OPE R ATIO N IN TH IS A RE A LIMITE D BY R DS (on) 1 0s I D , D ra in C u rre n t (A ) 100 100 s 100 TJ = 175 C T J = 25 C 1m s 10 10m s 10 0.4 0.8 1.2 1.6 2.0 VG S = 0 V 2.4 A 1 1 T C = 25 C T J = 17 5C S ing le Pulse 10 100 A 2.8 V S D , S ource-to-Drain Voltage (V ) V D S , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRLI2505 60 VDS 50 RD VGS RG D.U.T. + ID , Drain Current (A) 40 -VDD 5.0V 30 Pulse Width 1 s Duty Factor 0.1 % 20 Fig 10a. Switching Time Test Circuit VDS 90% 10 0 25 50 75 100 125 150 175 T C , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 (Z thJC) D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJC + T C 0.001 0.01 0.1 1 10 PDM t1 t2 Thermal Response 0.01 0.00001 0.0001 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case IRLI2505 VDS D.U.T. RG + V - DD 5.0 V E A S , S in g le P u ls e A va la n c h e E n e rg y (m J) L 1200 TO P 1000 BO TTOM ID 2 2A 38A 54 A 800 IAS tp 0.01 600 Fig 12a. Unclamped Inductive Test Circuit 400 200 V(BR)DSS tp VDD VDS 0 V D D = 2 5V 25 50 75 100 125 150 A 175 Starting TJ , Junction T emperature (C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 5.0 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit IRLI2505 Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer D.U.T + - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS IRLI2505 Package Outline TO-220 FullPak Outline Dimensions are shown in millimeters (inches) 10.60 (.41 7) 10.40 (.40 9) o 3.40 (.133 ) 3.10 (.123 ) -A 3.70 (.145) 3.20 (.126) 4.8 0 (.189) 4.6 0 (.181) 2 .80 (.110) 2 .60 (.102) LE AD A S SIGN M E N T S 1 - GA TE 2 - D R AIN 3 - SO U R C E 7 .10 (.280) 6 .70 (.263) 16 .0 0 (.630) 15 .8 0 (.622) 1.15 (.04 5) M IN . 1 2 3 N O T ES : 1 D IM EN SION IN G & T O LER A N C IN G PE R AN S I Y14.5 M , 1982 2 C O N TR OLLIN G D IM EN S ION : IN C H . 3.30 (.130 ) 3.10 (.122 ) -B13 .7 0 (.540) 13 .5 0 (.530) C D A 1.40 (.05 5) 3X 1.05 (.04 2) 2 .54 (.100) 2X 0.9 0 (.035) 3X 0.7 0 (.028) 0.25 (.010 ) M AM B 3X 0.48 (.019) 0.44 (.017) B 2.85 (.112 ) 2.65 (.104 ) M IN IM U M C R E EP AG E D IST A NC E B ET W E EN A-B -C -D = 4.80 (.189 ) Part Marking Information TO-220 FullPak E XAM PLE : T HIS IS A N IRF I840G W ITH AS SE MBLY LOT CODE E401 A INT ER NAT IONA L RE CTIF IER LOGO PA RT NU MBE R IRF I840G E 401 9 24 5 AS SE MBLY LOT COD E D ATE CODE (YYW W ) YY = YE AR W W = W E EK WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/97 |
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